Silicon single crystal and process for producing it

A process for producing a silicon single crystal with a <113> orientation, comprising

• pulling the silicon single crystal using a Czochralski method in the form of an ingot which is suspended from a dash seed and has two conical end pieces, and
• one of said conical end pieces is connected to the dash seed.

In a method for the production of semiconductor wafers which are selected from a group which includes semiconductor wafers with one or two polished side faces, semiconductor wafers with an epitaxial coating, semiconductor wafers which have been subjected to a heat treatment and semiconductor wafers which have been coated in some other way, the improvement which comprises

• utilizing the silicon single crystal as claimed in claim for said production.