US 2003/0145291 A1Published application

Specimen analyzing method

AssigneeSII NanoTechnology Inc.

InventorsToshiaki Fujii, Masamichi Oi, Atsushi Yamauchi

Life of this patent

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Abstract

In keeping with an increase of the size of wafers, etc. used in a fabrication process, a device used for inspection also becomes large, and as a result, more installation space is needed. In addition, due to the increase in the device size, there is a problem that the device becomes expensive and investment in equipment rises. The object of the present investment is to solve these problems. A sample having foreign matter or defects 4 that has already been inspected is divided so as to include a plurality of reference points 3 where positional coordinates can be determined. The divided sample 2 is inspected using a compact inspection device. At this time, the positional coordinates of the foreign matter or defects 4 are calculated from the positional coordinates of reference points 3 on the divided sample 2, are then inspected.

Claims10

Dependent claims

A sample analysis method for analyzing a sample using a second device based on position information on a surface of the sample measured by a first device, comprising the steps of:

measuring position information for a plurality of reference points on the surface of the sample using the first device;
measuring position information for a subject to be measured on the surface of the sample using the first device or a third device[JP2] capable of sharing usage of the position coordinate information with the first device;
creating a small piece of the sample by dividing the sample into a piece with an area including the plurality of reference points;
and mounting the small piece of the divided sample onto the second device, measuring the position of the plurality of reference points using the second device, and specifying the position of the subject to be measured by the first device from the position information for the plurality of reference points.

1 more element

Dependencies are inferred from the claim text.

Facts

Application: 10/130,880Filed 17 Jul 2002
Priority: JP 2000-31032111 Oct 2000
Published: 31 Jul 2003
Term ends: Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10P 74/23
Testing or measuring during manufacture or treatment of wafers, substrates or devices: characterised by multiple measurements, corrections,…
H01J 2237/2817
Characterised by the application: pattern inspection
H10W 46/603
For use after dicing: formed on wafers or substrates before dicing and remaining on chips after dicing
H10P
Generic processes or apparatus for the manufacture or treatment of devices covered