Semiconductor processing methods
AssigneeMicron Technology, Inc.
InventorsKevin J. Torek, Satish Bedge
Life of this patent
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Abstract
The invention includes a semiconductor processing method in which a semiconductor substrate is exposed to reactive ion etching conditions. The reactive ion etching conditions comprise subjecting exposed surfaces of the substrate to a gas having components therein which are reactive with the exposed surfaces. A total concentration of the reactive components within the gas is less than 4.5%, by volume. In particular aspects, the total concentration of the reactive components can be less than 2% by volume, or less than 1% by volume. Exemplary reactive components are fluorine-containing components, such as NF3.
Claims91
A semiconductor processing method comprising exposing a semiconductor substrate to etching conditions which include subjecting exposed surfaces of the substrate to a gas having components therein which are reactive with the exposed surfaces;
- and wherein a total concentration of such components within the gas is less than 4.5%, by volume.
A semiconductor processing method, comprising:
- providing a semiconductor substrate having an opening extending therein;
- the opening having a depth and a width;
- and
- exposing the substrate to reactive ion etching conditions which comprise subjecting exposed surfaces of the substrate to a gas having components therein which are reactive with the exposed surfaces, and wherein a total concentration of such components within the gas is less than 4.5%, by volume;
- wherein the etching conditions comprise exposing the substrate to a bias of from about 50 watts to about 2000 watts in a reactive ion etch plasma reactor, while maintaining a pressure within the reactor at from about 300 mTorr to about 4,000 mTorr.
A semiconductor processing method, comprising:
- providing a semiconductor substrate having a first mass, a second mass over the first mass, and an opening extending through the first mass and into the second mass, the second mass having a thickness and the opening having a depth;
- and
- while a bottom periphery of the opening is exposed, subjecting the substrate to etching conditions which remove at least 250 Å from the thickness of the second mass and which extend the depth of the opening by no more than 50 Å.
A semiconductor processing method, comprising:
- providing a semiconductor substrate having a first mass, a second mass over the first mass, and an opening extending through the first mass and into the second mass, the second mass having a thickness and the opening having a width;
- and
- without providing a protective material over a bottom periphery of the opening, subjecting the substrate to etching conditions which remove at least 250 Å from the thickness of the second mass and which extend the width of the opening by no more than about 100 Å.
A semiconductor processing method, comprising:
- providing a semiconductor substrate having a first material, second material and third material;
- the second material being over the first material, and the third material being over the second material;
- the third material having a thickness;
- the substrate having an opening extending through the second and third materials and to proximate a surface of the first material;
- the opening having a depth and a width;
- and
- exposing the substrate to reactive ion etching conditions which comprise subjecting exposed surfaces of the substrate to a gas having components therein which are reactive with the second and third materials, and wherein a total concentration of such components within the gas is less than 4.5%, by volume.
Dependencies are inferred from the claim text.