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US 2003/0143867 A1Published application
Method for forming low dielectric constant interlayer insulation film
AssigneeASM Japan K.K.
InventorsNobuo Matsuki, Yoshinori Morisada, Atsuki Fukazawa, Manabu Kato
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Abstract
An insulation film is formed on a semiconductor substrate by a method including the steps of: (i) introducing a source gas comprising a compound composed of at least Si, C, and H into a chamber; (ii) introducing in pulses an oxidizing gas into the chamber, wherein the source gas and the oxidizing gas form a reaction gas; and (iii) forming an insulation film on a semiconductor substrate by plasma treatment of the reaction gas. The plasma treatment may be plasma CVD processing.
Claims16
A method for forming an insulation film on a semiconductor substrate, comprising the steps of:
- introducing a source gas comprising a compound composed of at least Si, C, and H into a chamber;
- introducing in pulses an oxidizing gas into the chamber, wherein the source gas and the oxidizing gas form a reaction gas;
- and
- forming an insulation film on a semiconductor substrate by plasma treatment of the reaction gas.
1 more element
Dependencies are inferred from the claim text.