Method of spin etching wafers with an alkali solution
AssigneeStrasbaugh
InventorSalman M. Kassir
Life of this patent
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Abstract
A method of relieving surface stress on a thin wafer by removing a small portion of the wafer substrate, the substrate being removed by applying a solution of KOH to the wafer while the wafer spins.
Claims17
A method of preparing an integrated circuit comprising the steps of:
- providing a silicon wafer having a front side and a back side;
- building the integrated circuit on the front side of the silicon wafer;
- thereafter removing substrate from the back side of the silicon wafer;
- thereafter spraying the back side of the silicon wafer with a base while spinning the wafer;
- and
- rinsing the silicon wafer.
A method of preparing an integrated circuit comprising the steps of:
- providing a silicon wafer having a front side and a back side;
- building the integrated circuit on the front side of the silicon wafer;
- removing substrate from the back side of the silicon wafer;
- spraying the back side of the silicon wafer with an aqueous solution of potassium hydroxide while spinning the wafer;
- and
- rinsing the silicon wafer.
A method of manufacturing an integrated circuit chip, wherein the integrated circuit chip is manufactured by building up a plurality of integrated circuits on the front side of a silicon wafer substrate and backgrinding the back side of the silicon wafer substrate, and said backgrinding is accomplished by securing the built up front side of the silicon wafer to a work chuck and grinding a portion of the silicon wafer substrate from the back side of the silicon wafer substrate, and thereafter etching the backside of the silicon wafer substrate with an alkali etching solution and cutting the silicon wafer into a plurality of individual integrated circuit chips.
Dependencies are inferred from the claim text.