Patterning methods for fabricating semiconductor devices

A patterning method for fabricating a semiconductor device, the method comprising:

• preparing a wafer having a first patterning region and a second patterning region;
• forming a predetermined material layer on the wafer;
• forming a photoresist layer on the material layer;
• exposing the first patterning region of the photoresist layer;
• exposing the second patterning region of the photoresist layer;
• developing the photoresist layer wherein a photoresist pattern is formed uncovering the material layer at a predetermined region;
• etching the uncovered material layer using the photoresist pattern as an etch mask to form a material pattern;
• and
• removing the photoresist pattern to uncover the material pattern,
• wherein the material pattern has different line widths in the first patterning region and the second patterning region.

A pattering method for fabricating a semiconductor device, the method comprising:

• preparing a wafer having a first patterning region and a second patterning region;
• forming a predetermined material layer on the wafer;
• forming a first photoresist pattern on the material layer, the first photoresist pattern having an opening uncovering the material layer at the first patterning region;
• etching the uncovered material layer using the first photoresist pattern as an etch mask to form a first material pattern;
• removing the first photoresist pattern to uncover the first material pattern;
• forming a second photoresist pattern on the wafer where the first material pattern is uncovered, the second photoresist pattern having an opening uncovering the first material pattern at the second patterning region;
• etching the uncovered first material pattern using the second photoresist pattern as an etch mask to form a second material pattern;
• and
• removing the second photoresist pattern to uncover the second material pattern,
• wherein the first material pattern and the second material pattern have different line widths.