Method of forming low dielectric constant insulating layer and method of manufacturing semiconductor device

A method of forming a low dielectric constant insulating layer comprising:

• applying a material of low dielectric constant insulating layer containing a precursor of substances to constitute the low dielectric constant insulating layer or the substances above a substrate to be processed;
• and
• curing the material of low dielectric constant insulating layer by irradiating the material of low dielectric constant insulating layer with electron beams generated by an electron generating part with the substrate to be processed being heated in a treatment chamber,
• an electric field reducing a speed of the electron beams being applied between the electron generating part and the substrate to be processed.

A method of manufacturing a semiconductor device comprising:

• forming a coating layer made of a material of low dielectric constant insulating layer containing a precursor of substances to constitute a low dielectric constant insulating layer or the substances above a semiconductor substrate, on which devices have been formed;
• and
• curing the material of low dielectric constant insulating layer by irradiating the coating layer made of the material of low dielectric constant insulating layer with electron beams with the semiconductor substrate being heated in a treatment chamber, thereby forming an inter-layer insulating layer,
• the electron beams being incident on the coating layer made of the material of low dielectric constant insulating layer from a direction different from a direction vertical to a surface of the coating layer made of the material of low dielectric constant insulating layer.

A method of manufacturing a semiconductor device comprising:

• forming a coating layer made of a material of low dielectric constant insulating layer containing a precursor of substances to constitute a low dielectric constant insulating layer or the substances above a semiconductor substrate, on which devices have been formed;
• and
• curing the material of low dielectric constant insulating layer by irradiating the coating layer made of the material of low dielectric constant insulating layer with electron beams generated by an electron generating part with the semiconductor substrate being heated in a treatment chamber, thereby forming an inter-layer insulating layer,
• an electric field reducing a speed of the electron beams being applied between the electron generating part and the semiconductor substrate.