Method of forming a copper wiring in a semiconductor device

Abstract

A method of forming a copper wiring in a semiconductor device. The method can prevent an increase of a dielectric constant of a low dielectric film and making bad deposition of a copper anti-diffusion film, due to infiltration of an organic solvent, an etch gas, etc. into the low dielectric film exposed at the side of a damascene pattern during a wet cleaning process for removing polymer generating when a portion of the low dielectric film is etched to form the damascene pattern or during a photoresist pattern strip process. In order accomplish these purpose, a polymer layer is changed to a SiCH film using SiH4 plasma without removing the polymer layer formed at the side of the damascene pattern. Therefore, infiltration of an organic solvent or an etch gas can be prevented due to the SiCH film having a condense film quality and a good mechanical strength. Also, the SiCH film serves as a copper anti-diffusion film and in structure, supports a porous low dielectric film having a weak mechanical strength.

Dependencies are inferred from the claim text.