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US 2003/0143836 A1Published application
Power semicondutor component and method for producing the same
AssigneeABB Schweiz AG
InventorsStefan Linder, Hans Rudolf Zeller
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AssigneeABB Schweiz AG
InventorsStefan Linder, Hans Rudolf Zeller
Estimating the term…
In a method for fabricating a semiconductor component with a cathode and an anode from a wafer, the wafer is first provided with a stop zone, thereupon treated on the cathode side and only then reduced in its thickness, so that all that remains of the stop zone is a tail barrier zone. In this case, the stop zone is doped and reduced to the tail barrier zone in such a way that a quantitative optimization of the fabrication method and thus of a thinned semiconductor element is made possible. In said quantitative optimization, diverse parameters and their relation to one another are taken into account, in particular a dopant area density of a tail barrier zone, a dopant density at an anodal surface of the tail barrier zone, a dopant density of a base, a characteristic decay length or slope of the doping profile of the tail barrier zone, and also a thickness of a base—resulting from the wafer—from anode to cathode.
A method for fabricating a semiconductor component with a cathode and an anode from a wafer, the wafer first being treated on the cathode side, the thickness of the wafer thereupon being reduced on the side opposite to the cathode, and, in a further step, an anode being produced on said side, a stop layer being introduced before the cathodal treatment, and the stop layer being removed except for a tail barrier layer zone during the reduction of the wafer thickness, characterized in that the stop layer is produced, in the tail barrier layer zone, with a dopant area density which lies between a minimum and a maximum area density, the maximum dopant area density being chosen in a manner dependent on a doping profile decay length in the tail barrier layer zone, and the minimum dopant area density being chosen in a manner dependent on a punch-through degree defined as the ratio of a punch-through voltage and an avalanche breakdown voltage.
A method for fabricating a semiconductor component with a cathode and an anode from a wafer, the wafer first being treated on the cathode side, the thickness of the wafer thereupon being reduced on the side opposite to the cathode, and, in a further step, an anode being produced on said side, a stop layer being introduced before the cathodal treatment, and the stop layer being removed except for a tail barrier layer zone during the reduction of the wafer thickness, characterized in that the tail barrier layer zone has a characteristic length L and the stop layer is produced, at the anodal surface of the tail barrier layer zone, with a dopant density NS such that the following at least approximately holds true
A semiconductor component with a cathode and an anode, a stop layer being present adjacent to the anode, the doping density of which stop layer increases toward the anode, the stop zone having a doping profile that is cut off toward the anode, and in that the stop zone has, in the anodal region, a doping atom area density which is at least approximately greater than
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