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US 2003/0143835 A1Published application
Dual damascene process for improving planarization of an inter-metal dielectric layer
OwnerShyh-Dar Leeinventor
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Abstract
A dual damascene process for improving planarization of an inter-metal dielectric (IMD) layer. A removable protective layer is provided between a hard mask layer and an IMD layer to prevent the top of the IMD layer from erosion by dry etching during the formation of a dual damascene opening. After using an organic solution to remove the removable protective layer, the top of the IMD layer becomes a planarized surface.
Claims9
A dual damascene process for improving planarization of an inter-metal dielectric (IMD) layer, comprising steps of:
- providing a semiconductor substrate with a metal wiring layer patterned thereon;
- successively depositing a sealing layer, an IMD layer, a removable protective layer and a hard mask layer on the semiconductor substrate;
- patterning the hard mask layer and the removable protective layer to form a first opening positioned corresponding to the metal wiring layer;
- patterning the IMD layer to form a second opening within the first opening, in which the second opening is positioned corresponding to the metal wiring layer;
- patterning the IMD layer and the sealing layer to form a trench and a contact via within the first opening and the second opening and removing the hard mask layer, in which the trench and the contact via serve a dual damascene opening and the contact via exposes the metal wiring layer;
- and
- removing the removable protective layer to expose the top of the IMD layer;
- depositing a barrier layer on the entire surface of the semiconductor substrate;
- and
- forming a metal layer to fill the dual damascene opening and electrically connect the metal wiring layer.
7 more elements
Dependencies are inferred from the claim text.