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US 2003/0143824 A1Published application
Pattern formation method
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsMasayuki Endo, Masaru Sasago
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Abstract
After pre-baking a resist film, a solvent included in the resist film is vaporized. After vaporizing the solvent included in the resist film, pattern exposure is performed by selectively irradiating the resist film with exposing light in vacuum. The resist film is developed after the pattern exposure, so as to form a resist pattern.
Claims9
A pattern formation method comprising the steps of:
- performing pre-bake on a resist film;
- vaporizing a solvent included in said resist film after the pre-bake;
- performing pattern exposure by selectively irradiating said resist film with exposing light in vacuum after vaporizing said solvent;
- and
- forming a resist pattern by developing said resist film after the pattern exposure.
2 more elements
Dependencies are inferred from the claim text.