Method of producing semiconductor chips with a chip edge guard, in particular for wafer level packaging chips

Method according to one of the preceding claims, characterized in that the provision of the trenches (21, 22) is carried out by a first sawing step.

Method according to one of the preceding claims, characterized in that the filling of the trenches (21, 22) is carried out by a dispensing step.

Method according to one of the preceding claims, characterized in that the filling of the trenches (21, 22) is performed in the course of applying a protective layer (20;

• 20′), which covers the first side at least partially outside the trenches (21, 22).

Method according to one of the preceding claims, characterized in that the first side of the semiconductor wafer (1) is applied to a carrier, preferably an adhesive film (29), before the grinding back.

Method according to one of the preceding claims, characterized in that the cutting through of the trenches (21, 22) filled with the protective agent (21′;

• 22′) is carried out by a second sawing step, the saw blade being thinner than the width of the trenches (21, 22).

Method according to one of the preceding claims, characterized in that the protective agent (21′;

• 22′) is a polymer resin, in particular polyimide, or a silicone resin.

Method according to one of the preceding claims, characterized in that the semiconductor chips (1a, 1b, 1c;

• 1a′, 1b′, 1c′) are wafer level packaging chips and an appropriate wiring plane (10, 2a, 2b, 3a, 3b, 4a, 4b, 11-16, 2a′, 2b′, 3a′, 3b′, 4a′, 4b′;
• 10, 2a, 2b, 3a, 3b, 4a, 4b, 11′-16′, 2a″, 2b″, 3a″, 3b″, 4a″, 4b″) is provided on the first side of the semiconductor wafer (1).

Method according to one of the preceding claims, characterized in that the wiring plane (10, 2a, 2b, 3a, 3b, 4a, 4b, 11-16, 2a′, 2b′, 3a′, 3b′, 4a′, 4b′;

• 10, 2a, 2b, 3a, 3b, 4a, 4b, 11′-16′, 2a″, 2b″, 3a″, 3b″, 4a″, 4b″) is provided before the forming of the trenches (21, 22).