Method of forming shallow trench isolation

Abstract

A method for manufacturing a shallow trench isolation. A pad oxide layer and a nitride layer are sequentially deposited on a substrate. The nitride layer and the pad oxide layer are patterned to expose the substrate. Thereafter, the exposed substrate is etched to form a plurality of trenches. A lining oxide layer is formed on the surface of the trenches. Subsequently, a first oxide layer is formed by high-density plasma chemical vapor deposition (HDPCVD) into the trenches and over the surface of the nitride layer. Next, the first oxide layer at the top of the trenches is removed by spin etching. Then, a second oxide layer is formed by the high-density plasma chemical vapor deposition (HDPCVD) to fill out the plurality of trenches and cover the surface of the nitride layer. The excess portion of the second oxide layer over the nitride layer, the nitride layer and the pad oxide layer are removed sequentially.

Dependencies are inferred from the claim text.