Semiconductor device and method
AssigneeTexas Instruments Incorporated
InventorsRajesh B. Khamankar, Amitabh Jain, Che-Jen Hu, Mark S. Rodder, Sunil V. Hattangady, Hiroaki Niimi, Zhiqiang Wu, Manoj Mehrotra
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Abstract
A semiconductor device and method for reducing dopant loss includes forming a gate electrode of an MOS transistor adjacent a semiconductor substrate. A relatively thin oxide screen layer is formed and disposed outwardly from the gate electrode. Nitrogen is then incorporated into the oxide screen layer. An upper dielectric layer is formed such that it is disposed outwardly from the nitrided oxide screen layer.
Claims24
A method for manufacturing a semiconductor device, comprising:
- forming a gate electrode of an MOS transistor adjacent a semiconductor substrate;
- forming a relatively thin oxide screen layer disposed outwardly from the gate electrode;
- and
- forming a first nitride layer on the oxide screen layer.
A method for manufacturing a semiconductor device, comprising:
- forming a gate electrode of an MOS transistor adjacent a semiconductor substrate;
- forming a relatively thin oxide screen layer disposed outwardly from the gate electrode;
- incorporating nitrogen into the oxide screen layer;
- and
- forming an upper dielectric layer disposed outwardly from the nitrided oxide screen layer.
A semiconductor device, comprising:
- a semiconductor substrate;
- a gate of an MOS transistor adjacent the semiconductor substrate;
- and
- one or more spacer structures proximate the gate,
- wherein a spacer structure comprise:
- a relatively thin nitrided oxide screen layer disposed outwardly from the gate;
- and
- an upper dielectric layer disposed outwardly from the nitrided oxide screen layer.
A semiconductor device, comprising:
- a semiconductor substrate;
- a gate of an MOS transistor adjacent the semiconductor substrate;
- and
- one or more spacer structures proximate the gate,
- wherein a spacer structure comprises:
- a relatively thin oxide screen layer disposed outwardly from the gate electrode;
- and
- a first nitride layer on the oxide screen layer.
Dependencies are inferred from the claim text.