Methods of patterning a multi-layer film stack and forming a lower electrode of a capacitor
AssigneeInternational Business Machines Corporation
InventorsSatish D. Athavale, Greg Costrini
Life of this patent
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Abstract
A process for forming a multilayer film stack including a noble metal electrode and a multilayer barrier. The process includes exposing the film stack to a plasma formed of reactive species from an excitable gas mixture of argon, a chlorine bearing gas, a fluorine bearing gas and a carbon bearing gas. The method of forming the lower electrode of a capacitor includes simultaneously etching a multilayer barrier and an electrode layer.
Claims11
A process for removing exposed portions of a multilayer film stack from a substrate, the multilayer film stack comprising a noble metal layer and one or more barrier layers, the process comprising:
- reacting the exposed portions of the multilayer film stack with reactive species for a period of time effective to substantially remove the film stack from the substrate, the reactive species being essentially free from hydrogen species are generated by exposing an excitable gas mixture to an energy source sufficient to generate the reactive species, the gas mixture comprising argon, a chlorine bearing compound, a carbon bearing compound and a fluorine bearing compound.
Dependencies are inferred from the claim text.