Manufacturing method of semiconductor device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsYoshitaka Ootsu, Takayuki Igarashi
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Abstract
In a capacitor formation area A1, a capacitor C1 is formed. The capacitor is constituted by a lower-layer electrode-use polysilicon layer 105 (lower-layer electrode) formed on a LOCOS separation film 101, a nitride film 106 (dielectric film) and an upper-layer electrode-use polysilicon layer 107 (upper-layer electrode). In this case, the lower-layer electrode-use polysilicon layer 105 and the nitride film 106 are formed as the same plane pattern. In CMOS formation area A2, an NMOS transistor Q11 is formed on a P-well region 102 and a PMOS transistor Q12 is formed in an N-well region 103. Both of the gate electrodes of NMOS transistor Q11 and NMOS transistor Q21 are formed by the upper-layer electrode-use polysilicon layer 107.
Claims7
A manufacturing method of a semiconductor device including a capacitor and insulating gate-type transistors formed in a predetermined base substrate, comprising the steps of:
- (a) preparing a predetermined base substrate having a first area for forming a capacitor and a second area for forming an insulating gate type transistor;
- (b) successively depositing a lower-layer electrode-use conductive layer and a dielectric-use insulating film on said predetermined base substrate;
- (c) patterning said lower-layer electrode-use conductive layer and said dielectric-use insulating film to form a lower-layer electrode and a dielectric film of said capacitor by using a lower-layer electrode-use mask;
- (d) after said step (c), forming an upper-layer electrode-use conductive layer on said predetermined substrate including said first and second areas;
- and
- (e) performing a patterning process on said upper-layer electrode-use conductive layer by using an upper-layer electrode-use mask to form an upper-layer electrode of said capacitor in said first area and a gate electrode of said insulating gate type transistor in said second area.
Dependencies are inferred from the claim text.