SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same

A method of fabricating a silicon-on-insulator (SOI) semiconductor integrated circuit on an SOI substrate including a supporting substrate, a buried insulating layer on the supporting substrate and a semiconductor layer of a first conductivity type on the buried insulating layer, the method comprising:

• etching a portion of the semiconductor layer to form a partial trench region defining a transistor active region and at least one body contact active region spaced apart from the transistor active region and leave a semiconductor residue layer, which is thinner than the semiconductor layer, between the transistor active region and the body contact active region;
• etching a predetermined region of the semiconductor residue layer to form a full trench region exposing the buried insulating layer around the transistor active region and define a body extension extended from a portion of sidewall of the semiconductor residue layer toward the transistor active region, wherein the body extension connecting the transistor active region to the semiconductor residue layer;
• forming a full trench isolation layer and a partial trench isolation layer inside the full trench region and the partial trench region, respectively;
• and
• forming an insulated gate pattern crossing over the transistor active region, the insulated gate pattern being overlapped with the body extension.