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US 2003/0143494 A1Published application
Pattern formation method
AssigneeMatsushita Electric Industrial Co., Litd.
InventorsMasayuki Endo, Masaru Sasago
Life of this patent
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Abstract
Pattern exposure is performed by selectively irradiating a resist film with extreme UV of a wavelength of a 1 nm through 30 nm band at exposure energy of 5 mJ/cm2 or less. After the pattern exposure, the resist film is developed so as to form a resist pattern.
Claims9
A pattern formation method comprising the steps of:
- performing pattern exposure by selectively irradiating a resist film with extreme UV of a wavelength of a 1 nm through 30 nm band at exposure energy of 5 mJ/cm2 or less;
- and
- forming a resist pattern by developing said resist film after the pattern exposure.
A pattern formation method comprising the steps of:
- performing pattern exposure by selectively irradiating a resist film with extreme UV of a wavelength of a 1 nm through 30 nm band at exposure power of 5 W or less;
- and
- forming a resist pattern by developing said resist film after the pattern exposure.
A pattern formation method comprising the steps of:
- performing pattern exposure by selectively irradiating a resist film with extreme UV of a wavelength of a 1 nm through 30 nm band at exposure energy of 5 mJ/cm2 or less and exposure power of 5 W or less;
- and
- forming a resist pattern by developing said resist film after the pattern exposure.
Dependencies are inferred from the claim text.