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US 2003/0143489 A1Published application
Method of inhibiting pattern collapse using a relacs material
AssigneeHynix Semiconductor Inc.
InventorsKeun Kyu Kong, Sung Koo Lee
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Abstract
A method of inhibiting pattern collapse using relacs (resist enhancement lithography assisted by chemical shrink) is disclosed herein. More particularly, the present invention relates to a method of forming photoresist patterns by coating relacs material on an underlying layer before coating photoresist material thereon and then heating the layer to inhibit pattern collapse.
Claims7
A method of forming photoresist patterns comprising:
- (a) coating a bottom antireflective coating film on an underlying layer;
- (b) coating relacs material on the bottom antireflective coating film;
- (c) forming and heating a photoresist film on the relacs material;
- and
- (d) selectively exposing and developing the photoresist film.
2 more elements
Dependencies are inferred from the claim text.