Storage nodes of stacked capacitors and methods for manufacturing the same

A method of manufacturing a node of a stacked capacitor, the method comprising:

• forming a first dielectric layer having a contact plug therein on an integrated circuit substrate;
• forming a second dielectric layer including a storage node hole adjacent the contact plug on the first dielectric layer;
• depositing a conductive layer into the storage node hole and on the second dielectric layer;
• oxidizing the conductive layer to form a conductive oxide layer on the conductive layer;
• and
• removing the second dielectric layer to define the node of the stacked capacitor including the conductive layer and the conductive oxide layer.

An integrated circuit device including a plurality of stacked capacitors comprising:

• an integrated circuit substrate including a plurality of lower electrodes therein;
• a dielectric on a surface of the plurality of lower electrodes away from the integrated circuit substrate;
• and
• an upper electrode on a surface of the dielectric opposite from the plurality of lower electrodes, the tipper electrode comprising a conductive layer and a conductive oxide layer comprising an oxide of the conductive layer of the upper electrode, the upper electrode extending between ones of the plurality of lower electrodes.

A metal-insulator-metal (MIM) capacitor comprising:

• a semiconductor substrate;
• a lower electrode being composed of a conductive layer, which is formed as a cup shape on the semiconductor substrate, and a conductive oxide layer that is made by oxidizing the conductive layer and fills a space defined by the conductive layer;
• a dielectric layer for covering the upper portion of the lower electrode;
• and
• an upper electrode being formed on the dielectric layer,
• wherein the conductive oxide layer is a conductive material that has almost the same work function as the conductive layer, and
• the conductive layer is formed of a material selected from the group consisting of ruthenium (Ru), tungsten (W) and iridium (Ir).

A metal-insulator-metal (MIM) capacitor comprising:

• a semiconductor substrate;
• a lower electrode comprising a conductive layer that is formed as a stack type on the semiconductor substrate, and a conductive oxide layer that is made by oxidizing the conductive layer and is formed on the conductive layer to a predetermined thickness;
• a dielectric layer for covering the lower electrode;
• and
• an upper electrode being formed on the dielectric layer,
• wherein the conductive oxide layer is a conductive material that has almost the same work function as the conductive layer, and
• the conductive layer is formed of a material selected from the group consisting of ruthenium (Ru), tungsten (W) or iridium (Ir).

A metal-insulator-metal (MIM) capacitor comprising:

• a lower electrode formed on a semiconductor substrate;
• a dielectric layer for covering the upper portion of the lower electrode;
• and
• an upper electrode being composed of a conductive layer that is formed on the dielectric layer, and a conductive oxide layer that is made by oxidizing the conductive layer,
• wherein the conductive oxide layer of the upper electrode, is a conductive material that has almost the same work function as the conductive layer of the upper electrode, and
• wherein the conductive layer of the upper electrode is formed of a material selected from the group consisting of ruthenium (Ru), tungsten (W) and iridium (Ir).

A method for fabricating a metal-insulator-metal (MIM) capacitor, the method comprising:

• forming a mold oxide layer having a conductive plug, on a semiconductor substrate;
• etching a predetermined portion of the mold oxide layer to expose the conductive plug so that a lower electrode region is defined;
• filling a conductive layer into the lower electrode region of the mold oxide layer;
• oxidizing the conductive layer to form a conductive oxide layer to be higher than the mold oxide layer;
• and
• removing the mold oxide layer,
• wherein the mold oxide layer has a thickness such that the conductive layer can be fully reclaimed without seams,
• the conductive oxide layer is a conductive material that has almost the same work function as the conductive layer, and
• the conductive layer is formed of a material selected from the group consisting of ruthenium (Ru), tungsten (W) and iridium (Ir).

A method for fabricating a metal-insulator-metal (MIM) capacitor, comprising:

• forming a plurality of lower electrodes to a predetermined thickness on a semiconductor substrate;
• forming a dielectric layer on the plurality of lower electrodes;
• forming a conductive layer for an upper electrode on the dielectric layer;
• and
• forming a conductive oxide layer by oxidizing the conductive layer to completely fill a space between ones of the plurality of lower electrodes, thereby forming an upper electrode that is made of the conductive layer and the conductive oxide layer,
• wherein the conductive oxide layer is a conductive material that has almost the same work function as the conductive layer, and
• the conductive layer, which constitutes the upper electrode, is formed of a material selected from the group consisting of ruthenium (Ru), tungsten (W) and iridium (Ir).