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US 2003/0142280 A1Published application
Lithographic apparatus and device manufacturing method
AssigneeASML Netherlands B.V.
InventorsLeon Bakker, Jeroen Jonkers, Hugo Matthieu Visser
Life of this patent
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Abstract
A lithographic apparatus includes a first space containing a plasma source and also containing a source gas which may have a high absorption of radiation at the wavelength of the projection beam of the apparatus, this gas being restricted from entering the remainder of the lithographic system by a second space containing a buffer gas having a low absorption at the wavelength of the projection beam of the apparatus. The pressure of the buffer gas is lower than or equal to that of the source gas.
Claims7
A lithographic projection apparatus, comprising:
- a radiation system constructed and arranged to provide a projection beam of radiation;
- a support structure constructed and arranged to support a patterning device, the patterning device constructed and arranged to pattern the projection beam according to a desired pattern;
- a substrate table constructed and arranged to hold a substrate;
- a projection system constructed and arranged to project the patterned beam onto a target portion of the substrate;
- a plasma source constructed and arranged to produce a beam of extreme ultraviolet radiation, which plasma source is a part of the radiation system;
- a first space containing the plasma source and a source gas from the plasma source;
- and
- a second space separated from the first space by a wall containing a beam aperture, the second space containing a buffer gas which is different from the source gas;
- wherein the pressure in the second space is less than or approximately equal to the pressure in the first space and wherein the projection beam passes through the first and second spaces.
6 more elements
A device manufacturing method, comprising:
- providing a substrate that is at least partially covered by a layer of radiation-sensitive material;
- providing a projection beam of radiation using a radiation system;
- using a patterning device to endow the projection beam with a pattern in its cross-section;
- projecting the patterned beam of radiation onto a target portion of the layer of radiation-sensitive material;
- using a plasma source, which is a part of the radiation system, to provide the projection beam, wherein the projection beam comprises extreme ultraviolet radiation;
- providing a first space containing the plasma source and a source gas from the plasma source;
- and
- providing a buffer gas which is different from the source gas to a second space, such that the pressure in the second space is less than or approximately equal to the pressure in the first space;
- wherein the second space is separated from the first space by a wall containing a beam aperture;
- and wherein the projection beam passes through the first and second spaces.
7 more elements
Dependencies are inferred from the claim text.