Radiation-emitting semiconductor component
AssigneeOSRAM Opto Semiconductors GmbH
InventorsDominik Eisert, Stephan Kaiser, Michael Fehrer, Berthold Hanh, Volker Harle
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Abstract
A radiation-emitting semiconductor component has a semiconductor body containing a nitride compound semiconductor, and a contact metallization layer disposed on a surface of the semiconductor body. In this case, the contact metallization layer is covered with a radiation-transmissive, electrically conductive contact layer. The radiation generated is coupled out through the contact metallization layer or through openings in the contact metallization layer.
Claims48
A radiation-emitting semiconductor component, comprising:
- a semiconductor body containing a nitride compound semiconductor and having a surface;
- a contact metallization layer disposed on said surface of said semiconductor body, said contact metallization layer being radiation-transmissive;
- and
- a radiation-transmissive, electrically conductive contact layer at least partly covering said contact metallization layer.
A radiation-emitting semiconductor component, comprising:
- a semiconductor body containing a nitride compound semiconductor and having a surface;
- a contact metallization layer disposed on said surface of said semiconductor body, said contact metallization layer having a plurality of openings formed therein defining a plurality of contact islands spaced apart from one another;
- and
- a radiation-transmissive, electrically conductive contact layer at least partly covering said contact metallization layer.
Dependencies are inferred from the claim text.