Semiconductor device with source line having reduced resistance and manufacturing method therefor

A semiconductor device comprising:

• a plurality of first impurity introduced regions isolated from each other by an isolation insulating film and aligned in a predetermined direction;
• a second impurity introduced region extending in said predetermined direction and located at a distance away from said plurality of first impurity introduced regions;
• a control electrode extending in said predetermined direction between said plurality of first impurity introduced regions and said second impurity introduced region;
• a semiconductor substrate having a main surface wherein said isolation insulating film and said second impurity introduced region are formed;
• and
• a metal-semiconductor compound layer formed on said main surface in a portion wherein said second impurity introduced region is formed,
• wherein an edge portion of said control electrode on said first impurity introduced regions side is formed on said isolation insulating film and an edge portion of said control electrode on said second impurity introduced region side is formed above said main surface in a region between cells adjoining each other.

A semiconductor device comprising:

• a plurality of first impurity introduced regions isolated from each other by an isolation insulating film and aligned in a predetermined direction;
• a second impurity introduced region extending in said predetermined direction and located at a distance away from said plurality of first impurity introduced regions;
• a control electrode extending in said predetermined direction between said plurality of first impurity introduced regions and said second impurity introduced region;
• a semiconductor substrate having a main surface wherein said isolation insulating film and said first impurity introduced regions are formed;
• and
• a metal-semiconductor compound layer formed on said main surface in a portion wherein said first impurity introduced regions are formed,
• wherein an edge portion of said control electrode on said first impurity introduced regions side is formed above said main surface and an edge portion of said control electrode on said second impurity introduced region side is formed on said isolation insulating film on said first impurity introduced regions.