Method of simultaneously manufacturing a metal oxide semiconductor device and a bipolar device
AssigneeAgere Systems Guardian Corp.
InventorsJohn C. Desko, Chung-Ming Hsieh, Bailey Jones, Thomas J. Krutsick, Brian E. Thompson, Steve Wallace
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Abstract
The present invention provides a method of manufacturing a semiconductor device. The method may include forming first and second adjacent tubs in an epitaxial layer, and simultaneously forming a base region in the first tub and lightly doped drain (LDD) regions in the second tub adjacent a first gate located over the second tub. The method may also include simultaneously forming a base contact region and a source/drain contact region.
Claims23
A method of manufacturing a semiconductor device, comprising:
- forming first and second adjacent tubs in a semiconductor substrate;
- and
- simultaneously forming a base region in the first tub and lightly doped drain (LDD) regions in the second tub adjacent a first gate located over the second tub.
A method of manufacturing a bipolar/metal oxide semiconductor device, comprising:
- forming first and second adjacent tubs in a semiconductor substrate;
- constructing a metal oxide semiconductor transistor gate over the second tub;
- simultaneously forming a base region in the first tub and lightly doped drain (LDD) regions in the second tub adjacent the metal oxide semiconductor transistor gate;
- constructing a bipolar transistor emitter on the base region;
- and
- simultaneously forming extrinsic base contacts in the first tub and source/drain regions in the second tub.
A method of manufacturing an integrated circuit, comprising:
- forming a plurality of first and second adjacent tubs in a semiconductor substrate;
- constructing metal oxide semiconductor transistor gates over each of the second tubs;
- simultaneously forming base regions in each of the first tubs and lightly doped drain (LDD) regions in each of the second tubs adjacent each of the metal oxide semiconductor transistor gates;
- constructing bipolar transistor emitters on each of the base regions;
- and
- simultaneously forming extrinsic base contacts in each of the first tubs and source/drain regions in each of the second tubs.
A bipolar/metal oxide semiconductor device, comprising:
- a metal oxide gate located on a semiconductor substrate and over a first tub having intrinsic and extrinsic source/drain regions formed therein, the intrinsic source/drain region having a dopant concentration therein and the extrinsic source/drain regions having a dopant concentration therein greater than the dopant concentration of the intrinsic source/drain regions;
- and
- a bipolar transistor located adjacent the first tub and over a second tub and including an emitter located over said substrate and an intrinsic base region located in the second tub, the intrinsic base region having a doping density substantially the same as the dopant concentration of the intrinsic source/drain regions.
Dependencies are inferred from the claim text.