Semiconductor device and method of manufacturing a semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsKiyotaka Miyano, Kazuya Ohuchi, Ichiro Mizushima
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Abstract
A semiconductor device comprises: a semiconductor substrate; a gate insulating film formed on the top surface of the semiconductor substrate; a gate electrode formed on the gate insulating film; diffusion layers formed in the semiconductor substrate to be used a source layer and a drain layer; and a silicide layer formed to overlie the diffusion layers; wherein an oxygen concentration peak, where oxygen concentration is maximized, is at a level lower than said top surface in a cross-section taken along a plane perpendicular to said top surface.
Claims19
A semiconductor device comprising:
- a semiconductor substrate;
- a gate insulating film formed on the top surface of the semiconductor substrate;
- a gate electrode formed on the gate insulating film;
- diffusion layers formed in the semiconductor substrate to be used a source layer and a drain layer;
- and
- a silicide layer formed to overlie the diffusion layers,
- wherein an oxygen concentration peak, where oxygen concentration is maximized, is in a level lower than said top surface in a cross-section taken along a plane perpendicular to said top surface.
A method of manufacturing a semiconductor substrate comprising:
- forming a gate insulating film on the top surface of a semiconductor substrate;
- forming a gate electrode on the gate insulating film;
- forming diffusion layers in a self-aligned manner in the semiconductor substrate on opposite sides of the gate electrode;
- forming an amorphous layer on the top surface of the semiconductor substrate above the diffusion layers;
- implanting ions of an injection substance into the semiconductor substrate through an interface thereof with the amorphous layer;
- annealing the semiconductor substrate at a relatively low temperature to partly change the amorphous layer to a single-crystal layer;
- and
- sputtering a metal onto the single-crystal layer and thereby forming a silicide layer from the single crystal and the metal.
Dependencies are inferred from the claim text.