Semiconductor device

Abstract

The invention makes it possible to form thyristers and SCRs that show a good discharge efficiency upon application of static electricity in semiconductor devices using a SOI substrate. A semiconductor device is equipped with a connection terminal for connection with an external element, a dielectric substrate having a semiconductor layer formed therein, a first region of a first conductive type that is formed in the semiconductor layer and electrically connected to the connection terminal, a second region of a second conductive type that is formed in the semiconductor layer and electrically connected to the first region, a third region of the first conductive type that is formed adjacent to the second region in the semiconductor layer, and a fourth region of the second conductive type that is formed adjacent to the third region in the semiconductor layer.

Dependencies are inferred from the claim text.