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AssigneeInternational Business Machines Corporation
InventorsAndres Bryant, Peter E. Cottrell, John J. Ellis-Monaghan, Robert J. Gauthier JR., Edward J. Nowak, Jed H. Rankin, Fariborz Assaderaghi
Estimating the term…
A body contact structure utilizing an insulating structure between the body contact portion of the active area and the transistor portion of the active area is disclosed. In one embodiment, the present invention substitutes an insulator for at least a portion of the gate layer in the regions between the transistor and the body contact. In another embodiment, a portion of the gate layer is removed and replaced with an insulative layer in regions between the transistor and the body contact. In still another embodiment, the insulative structure is formed by forming multiple layers of gate dielectric between the gate and the body in regions between the transistor and the body contact. The body contact produced by these methods adds no significant gate capacitance to the gate.
A silicon-on-insulator semiconductor device comprising a source, a drain, a first gate having a first thickness, and a body contact formed in a substantially coplanar semiconducting substrate, wherein said source and said drain are separated from said body contact by an insulator, said insulator not forming a part of said gate.
A method for making a body contact in a silicon-on-insulator transistor, said method comprising the steps of:
A method of reducing capacitance in a silicon-on-insulator transistor, said transistor having a source region, a drain region, a body-contact region, and a gate connecting said source region to said drain region, said method comprising the step of isolating said body-contact region from said source region and said drain region.
Dependencies are inferred from the claim text.