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US 2003/0141531 A1Published application
Semiconductor device having capacitor
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorKazuhiro Aihara
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Abstract
A semiconductor device having a capacitor according to the present invention has a storage node and a cell plate opposed to each other through a capacitor dielectric layer, and at least either the storage node or the cell plate is formed to have a mixed crystal layer of SiGe containing a p-type impurity. Thus, a semiconductor device having a capacitor capable of effectively preventing reduction of the capacitance can be obtained.
Claims8
A semiconductor device having a capacitor including a lower electrode and an upper electrode opposed to each other through a dielectric layer, wherein
- at least either said lower electrode or said upper electrode has a mixed crystal layer of SiGe containing a p-type impurity.
Dependencies are inferred from the claim text.