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US 2003/0141519 A1Published application
Partially relaxed channel HEMT device
AssigneeTRW Inc.
InventorsMichael Wojtowicz, Tsung-Pei Chin, Michael E. Barsky, Ronald W. Grundbacher
Life of this patent
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Abstract
A HEMT device comprises a buffer layer disposed over a substrate. A partially-relaxed channel is disposed over the buffer layer and a barrier layer is disposed over the channel. A cap layer is disposed over the barrier layer and a gate is positioned on the barrier layer. A source and a drain are positioned on the barrier layer on opposite sides of the gate.
Claims19
A high electron mobility transistor (HEMT) device comprising:
- a buffer layer disposed over a substrate;
- a partially-relaxed channel disposed over said buffer layer;
- a barrier layer disposed over said channel;
- a cap layer disposed over said barrier layer;
- a gate positioned on said barrier layer;
- and
- a source and a drain positioned on said cap layer.
4 more elements
A method for fabricating a HEMT device having a gate, a source and a drain comprising the steps of:
- depositing a buffer layer over a substrate;
- depositing a partially-relaxed channel over said buffer layer;
- depositing a barrier layer over said channel;
- depositing a cap layer over said barrier layer;
- positioning the gate on the barrier layer;
- and
- positioning the source and the drain at preselected locations on the cap layer.
4 more elements
Dependencies are inferred from the claim text.