Vertical component with high-voltage strength
AssigneeSTMicroelectronics S.r.l.
InventorGerard Auriel
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Abstract
The invention concerns a vertical component with a four-layered structure comprising a thick lightly-doped zone (1) of a first type of conductivity providing the component voltage strength, enclosed with a peripheral wall (2) of a second type of conductivity extending vertically from one surface to the other of the component, and highly doped layer (3) of the second type of conductivity extending over the entire rear surface of the component. A lightly-doped layer (21) of the second type of conductivity extends over the entire surface of the component at the interface between the lightly-doped thick zone of the first type of conductivity and the highly-doped layer of the second type of conductivity.
Claims3
A 4-layer structure vertical component including a thick lightly-doped area (1) of a first conductivity type determining a breakdown voltage of the component, surrounded with a peripheral wall (2) of a second conductivity type vertically extending from one surface of the component to the other, a heavily-doped layer (3) of the second conductivity type extending over an entire rear surface of the component, characterized in that it further comprises a lightly-doped layer (21) of the second conductivity type extending over an entire component surface at the interface between the lightly-doped thick area of the first conductivity type and the heavily-doped layer of the second conductivity type.
Dependencies are inferred from the claim text.