Substrate processing apparatus
AssigneeHitachi Kokusai Electric Inc.
InventorsTetsuya Wada, Harunobu Sakuma, Toshio Ando, Tsuyoshi Tamaru
Life of this patent
Estimating the term…
Abstract
A substrate processing apparatus includes a reaction chamber, a protection cover, a first heater, a second heater, and a gas supply pipe. The reaction chamber has a wall side and the protection cover covers an inner surface of the wall side. The first heater is interposed between the wall side and the protection cover and serves to heat the protection cover. The second heater is positioned in the reaction chamber and serves to heat a substrate transported in the reaction chamber. The gas supply pipe communicates with the reaction chamber and serves to supply material gas on the substrate.
Claims18
A substrate processing apparatus for processing a substrate, comprising:
- a reaction chamber including a sidewall;
- a protection cover facing an inner surface of the sidewall of the reaction chamber;
- a first heater, interposed between the sidewall of the reaction chamber and the protection cover, for heating the protection cover;
- a second heater positioned in the reaction chamber for heating the substrate;
- and
- a gas supplying member communicating with the reaction chamber for supplying a material gas on the substrate.
A method for processing a substrate using a substrate processing apparatus, which includes a) a reaction chamber having a sidewall, b) a protection cover facing an inner surface of the sidewall of the reaction chamber, c) a first heater, interposed between the sidewall of the reaction chamber and the protection cover, for heating the protection cover, d) a second heater positioned in the reaction chamber for heating the substrate, and e) a gas supplying member communicating with the reaction chamber for supplying a material gas on the substrate, the method comprising the steps of:
- loading the substrate into the reaction chamber;
- heating the substrate by using the second heater while the protection cover is heated by using the first heater;
- supplying the material gas on the substrate by using the gas supplying member to thereby make the substrate processed;
- and
- unloading the processed substrate out of the reaction chamber.
A chemical vapor deposition apparatus for processing a substrate, comprising:
- a reaction chamber having a sidewall;
- a heater installed on an inner surface of the sidewall of the reaction chamber;
- and
- a protection cover assembled with the sidewall of the reaction chamber to cover the heater.
Dependencies are inferred from the claim text.