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OwnerTadashi Kanda, Shunji Kuragaki +2inventors
InventorsTadashi Kanda, Shunji Kuragaki, Masahito Watanabe, Minoru Eguchi
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The invention provides a method of producing silicon single crystals which comprises using the CZ method under application of a magnetic field to the silicon melt and under application of an electric current containing a component perpendicular to this magnetic field, namely using the EMCZ method, adjusting the pulling rate in the process of single crystal growth and thereby growing a single crystal under conditions such that the outside diameter of the potential region of the ring-forming oxidation-induced stacking faults (R-OSF) occurring in the cross section of the crystal is within the range of 70% to 0% of the crystal diameter. By this, wafers for semiconductors excellent in device characteristics such as gate oxide integrity or the like can be produced with high productivity without formation of COPs with not less than 0.1 μm in size, or of dislocation clusters.
A method of producing silicon single crystals by the Czochralski method while applying a magnetic field to the silicon melt and applying an electric current perpendicular to the magnetic field to the silicon melt, which method comprises pulling a single crystal from the silicon melt at a pulling rate during a single crystal growing process so that an outside diameter of a potential region of oxidation-induced stacking faults occurring in the cross section of the single crystal is within the range of 70% to 0% of the crystal diameter.
Dependencies are inferred from the claim text.