Polymer, resist composition and patterning process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsTsunehiro Nishi, Mutsuo Nakashima, Tomohiro Kabayashi
Life of this patent
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Abstract
A polymer comprising recurring units of formula (1-1) or (1-2) wherein R1, R2, R3 and R4 are H or C1-15 alkyl, R1 and R2, and R3 and R4, taken together, may form a ring; R5 and R6 are H, C1-15 alkyl, acyl or alkylsulfonyl groups or C2-15 alkoxycarbonyl or alkoxyalkyl groups which may have halogen substituents; and k=0 or 1, and having a Mw of 1,000-500,000 is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, etching resistance, and minimized swell and lends itself to micropatterning with electron beams or deep-UV. 1
Claims7
A polymer comprising recurring units of the following general formula (1-1) or (1-2) and having a weight average molecular weight of 1,000 to 50,000,
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- wherein R1, R2, R3 and R4 each are hydrogen or a straight, branched or cyclic alkyl group of 1 to 15 carbon atoms, R1 and R2, and R3 and R4, taken together, may form a ring, wherein each combination of R1 with R2 and of R3 with R4 is a straight, branched or cyclic alkylene group of 2 to 15 carbon atoms,
- R5 and R6 each are hydrogen, a straight, branched or cyclic alkyl, acyl or alkylsulfonyl group of 1 to 15 carbon atoms or a straight, branched or cyclic alkoxycarbonyl or alkoxyalkyl group of 2 to 15 carbon atoms, in which some or all of the hydrogen atoms on constituent carbon atoms may be substituted with halogen atoms, and
- k is 0 or 1.
Dependencies are inferred from the claim text.