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US 2003/0119319 A1Published application
Methods for planarization of group VIII metal-containing surfaces using complexing agents
AssigneeMicron Technology, Inc.
InventorsNishant Sinha, Rita J. Klein
Life of this patent
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Abstract
A planarization method includes providing a second and/or third row Group VIII metal-containing surface (preferably, a platinum-containing surface) and positioning it for contact with a polishing surface in the presence of a planarization composition that includes a complexing agent.
Claims58
A planarization method comprising:
- positioning a Group VIII metal-containing surface of a substrate to interface with a polishing surface, wherein the Group VIII metal is selected from the group of rhodium, iridium, ruthenium, osmium, palladium, platinum, and combinations thereof;
- supplying a planarization composition in proximity to the interface;
- and
- planarizing the Group VIII metal-containing surface;
- wherein the planarization composition comprises a complexing agent selected from the group of a cyclic diene, an organic amine, and combinations thereof.
2 more elements
The method of claim I wherein the cyclic diene is selected from the group consisting of 1,5-cyclooctadiene (COD), 1,5-dimethyl-1,5-cyclooctadiene, and a combination thereof.
A planarization method comprising:
- positioning a Group VIII metal-containing surface of a substrate to interface with a polishing surface, wherein the Group VIII metal is selected from the group consisting of rhodium, iridium, ruthenium, osmium, palladium, platinum, and combinations thereof;
- supplying a planarization composition in proximity to the interface;
- and
- planarizing the Group VIII metal-containing surface;
- wherein the planarization composition comprises an organic amine and an organic chelating acid.
2 more elements
A planarization method comprising:
- positioning a Group VIII metal-containing surface of a substrate to interface with a polishing surface, wherein the Group VIII metal is selected from the group consisting of rhodium, iridium, ruthenium, osmium, palladium, platinum, and combinations thereof;
- supplying a planarization composition in proximity to the interface;
- and
- planarizing the Group VIII metal-containing surface;
- wherein the planarization composition comprises abrasive particles and a complexing agent;
- and further wherein a majority of the plurality of abrasive particles are CeO2 abrasive particles.
3 more elements
A planarization method comprising:
- positioning a Group VIII metal-containing surface of a substrate to interface with a polishing surface, wherein the Group VIII metal is selected from the group consisting of rhodium, iridium, ruthenium, osmium, palladium, platinum, and combinations thereof;
- supplying a planarization composition in proximity to the interface;
- and
- planarizing the Group VIII metal-containing surface;
- wherein the planarization composition comprises a complexing agent selected from the group consisting of a cyclic diene, an organic amine, an organic chelating acid, and combinations thereof;
- and
- further wherein the method is carried out in one step.
4 more elements
A planarization method comprising:
- providing a semiconductor substrate or substrate assembly including at least one region of a platinum-containing surface;
- providing a polishing surface;
- providing a planarization composition at an interface between the at least one region of platinum-containing surface and the polishing surface;
- and
- planarizing the at least one region of platinum-containing surface;
- wherein the planarization composition comprises a complexing agent selected from the group consisting of a cyclic diene, an organic amine, and combinations thereof.
3 more elements
A planarization method comprising:
- providing a semiconductor substrate or substrate assembly including at least one region of a platinum-containing surface;
- providing a polishing surface;
- providing a planarization composition at an interface between the at least one region of platinum-containing surface and the polishing surface;
- and
- planarizing the at least one region of platinum-containing surface;
- wherein the planarization composition comprises an organic amine and an organic chelating acid.
3 more elements
A planarization method comprising:
- providing a semiconductor substrate assembly including at least one region of a platinum-containing surface;
- providing a polishing surface;
- providing a planarization composition at an interface between the at least one region of platinum-containing surface and the polishing surface;
- and
- planarizing the at least one region of platinum-containing surface;
- wherein the planarization composition comprises abrasive particles and a complexing agent;
- and
- further wherein a majority of the plurality of abrasive particles are CeO2 abrasive particles.
5 more elements
A planarization method comprising:
- providing a semiconductor substrate or substrate assembly including at least one region of a platinum-containing surface;
- providing a polishing surface;
- providing a planarization composition at an interface between the at least one region of platinum-containing surface and the polishing surface;
- and
- planarizing the at least one region of platinum-containing surface;
- wherein the planarization composition comprises a complexing agent selected from the group consisting of a cyclic diene, an organic amine, an organic chelating acid, and combinations thereof;
- and
- further wherein the method is carried out in one step.
5 more elements
A planarization method for use in forming a capacitor or barrier layer, the method comprising:
- providing a semiconductor substrate or substrate assembly having a patterned dielectric layer formed thereon and a Group VIII metal-containing layer formed over the patterned dielectric layer, wherein the Group VIII metal is selected from the group consisting of rhodium, iridium, ruthenium, osmium, palladium, platinum, and combinations thereof;
- positioning a first portion of a polishing surface for contact with the Group VIII metal-containing layer;
- providing a planarization composition in proximity to the contact between the polishing surface and the Group VIII metal-containing layer;
- and
- planarizing the Group VIII metal-containing layer;
- wherein the planarization composition comprises a complexing agent selected from the group consisting of a cyclic diene, an organic amine, and combinations thereof.
3 more elements
A planarization method for use in forming a capacitor or barrier layer, the method comprising:
- providing a semiconductor substrate or substrate assembly having a patterned dielectric layer formed thereon and a Group VIII metal-containing layer formed over the patterned dielectric layer, wherein the Group VIII metal is selected from the group consisting of rhodium, iridium, ruthenium, osmium, palladium, platinum, and combinations thereof;
- positioning a first portion of a polishing surface for contact with the Group VIII metal-containing layer;
- providing a planarization composition in proximity to the contact between the polishing surface and the Group VIII metal-containing layer;
- and
- planarizing the Group VIII metal-containing layer;
- wherein the planarization composition comprises an organic amine and an organic chelating acid.
3 more elements
A planarization method for use in forming a capacitor or barrier layer, the method comprising:
- providing a semiconductor substrate or substrate assembly having a patterned dielectric layer formed thereon and a Group VIII metal-containing layer formed over the patterned dielectric layer, wherein the Group VIII metal is selected from the group consisting of rhodium, iridium, ruthenium, osmium, palladium, platinum, and combinations thereof;
- positioning a first portion of a polishing surface for contact with the Group VIII metal-containing layer;
- providing a planarization composition in proximity to the contact between the polishing surface and the Group VIII metal-containing layer;
- and
- planarizing the Group VIII metal-containing layer;
- wherein the planarization composition comprises abrasive particles and a complexing agent;
- and
- further wherein a majority of the plurality of abrasive particles are CeO2 abrasive particles.
5 more elements
A planarization method for use in forming a capacitor or barrier layer, the method comprising:
- providing a semiconductor substrate or substrate assembly having a patterned dielectric layer formed thereon and a Group VIII metal-containing metal is selected from the group consisting of rhodium, iridium, ruthenium, osmium, palladium, platinum, and combinations thereof;
- positioning a first portion of a polishing surface for contact with the Group VIII metal-containing layer;
- providing a planarization composition in proximity to the contact between the polishing surface and the Group VIII metal-containing layer;
- and
- planarizing the Group VIII metal-containing layer;
- wherein the planarization composition comprises a complexing agent selected from the group consisting of a cyclic diene, an organic amine, an organic chelating acid, and combinations thereof;
- and
- further wherein the method is carried out in one step.
5 more elements
Dependencies are inferred from the claim text.