Methods for planarization of group VIII metal-containing surfaces using oxidizing agents
AssigneeMicron Technology, Inc.
InventorsRita J. Klein, Nishant Sinha, Gundu Sabde, Stefan Uhlenbrock, Don Westmoreland
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Abstract
A planarization method includes providing a second and/or third row Group VIII metal-containing surface (preferably, a platinum-containing surface) and positioning it for contact with a polishing surface in the presence of a planarization composition that includes an oxidizing agent.
Claims54
A planarization method comprising:
- positioning a Group VIII metal-containing surface of a substrate to interface with a polishing surface, wherein the Group VIII metal is selected from the group consisting of rhodium, iridium, ruthenium, osmium, palladium, platinum, and combinations thereof;
- supplying a planarization composition in proximity to the interface;
- and
- planarizing the Group VIII metal-containing surface;
- wherein the planarization composition comprises no greater than about 10 weight percent of a solid or liquid oxidizing agent having a standard reduction potential of at least about 1.4 versus a standard hydrogen electrode at 25° C.
A planarization method comprising:
- providing a semiconductor substrate or substrate assembly including at least one region of a platinum-containing surface;
- providing a polishing surface;
- providing a planarization composition at an interface between the at least one region of platinum-containing surface and the polishing surface;
- and
- planarizing the at least one region of platinum-containing surface;
- wherein the planarization composition comprises no greater than about 10 weight percent of a solid or liquid oxidizing agent having a standard reduction potential of at least about 1.4 versus a standard hydrogen electrode at 25° C.
The method of claim 35 wherein the planarization composition comprises a plurality of abrasive particles selected from the group consisting of CeO2, Al2O3, SiO2, and combinations thereof.
A planarization method for use in forming a capacitor or barrier layer, the method comprising:
- providing a wafer having a patterned dielectric layer formed thereon and a Group VIII metal-containing layer formed over the patterned dielectric layer, wherein the Group VIII metal is selected from the group consisting of rhodium, iridium, ruthenium, osmium, palladium, platinum, and combinations thereof;
- positioning a first portion of a polishing surface for contact with the Group VIII metal-containing layer;
- providing a planarization composition in proximity to the contact between the polishing surface and the Group VIII metal-containing layer;
- and
- planarizing the Group VIII metal-containing layer;
- wherein the planarization composition comprises no greater than about 10 wt-% of a solid or liquid oxidizing agent having a standard reduction potential of at least about 1.4 versus a standard hydrogen electrode at 25° C.
A planarization method comprising:
- positioning a Group VIII metal-containing surface of a substrate to interface with a polishing surface, wherein the Group VIII metal is selected from the group consisting of rhodium, iridium, ruthenium, osmium, palladium, platinum, and combinations thereof;
- supplying a planarization composition in proximity to the interface;
- and
- planarizing the Group VIII metal-containing surface;
- wherein the planarization composition comprises no greater than about 10 wt-% abrasive particles and a solid or liquid oxidizing agent.
A planarization method comprising:
- positioning a ruthenium-containing surface of a substrate to interface with a polishing surface;
- supplying a planarization composition in proximity to the interface;
- and
- planarizing the ruthenium-containing surface;
- wherein the planarization composition comprises ceria particles and an oxidizing agent.
A planarization method comprising:
- positioning a platinum-containing surface of a substrate to interface with a polishing surface;
- supplying a planarization composition in proximity to the interface;
- and
- planarizing the platinum-containing surface;
- wherein the planarization composition comprises ceria particles and an oxidizing agent.
A planarization method comprising:
- positioning a platinum-containing surface of a substrate to interface with a polishing surface;
- supplying a planarization composition in proximity to the interface;
- and
- planarizing the platinum-containing surface;
- wherein the planarization composition comprises abrasive particles and a permanganate.
Dependencies are inferred from the claim text.