Method for forming interconnect structure with low dielectric constant
AssigneeUnited Microelectronics Corp.
InventorsMing-Sheng Yang, Chih-Chien Liu
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Abstract
The present invention provides a method for forming low dielectric constant inter-metal dielectric layer. The method comprises providing a semiconductor structure and forming a first dielectric layer on the semiconductor structure. Conductor structures are formed in the first dielectric layer. The partial first dielectric layer is removed by using the conductor structures as etching mask. A second dielectric layer is formed between the conductor structures, which has a dielectric constant smaller than the first dielectric layer. The second dielectric layer also alternatively has air voids contained therein to reduce dielectric constants.
Claims17
A method for forming low dielectric constant inter-metal dielectric layer, said method comprising:
- providing a semiconductor structure;
- forming a first dielectric layer on said semiconductor structure;
- forming a plurality of conductor structures in said first dielectric layer;
- removing partial said first dielectric layer, said removing step using said conductor structures as etching mask, wherein said etching mask is a self-aligned hard mask;
- and
- forming a second dielectric layer between said conductor structures, said second dielectric layer having a dielectric constant smaller than said first dielectric layer.
A method for improving mechanical strength of a low dielectric constant inter-metal dielectric layer, said method comprising:
- providing a semiconductor structure;
- forming an oxide-based inter-metal dielectric layer on said semiconductor structure;
- forming a plurality of metal structures in said oxide-based inter-metal dielectric layer;
- removing partial said oxide-based inter-metal dielectric layer, said removing step using said metal structures as an etching mask, wherein said etching mask is a self-aligned hard mask;
- and
- spinning a dielectric layer between said metal structures, said dielectric layer having a dielectric constant smaller than said oxide-based inter-metal dielectric layer.
A method for forming low dielectric constant inter-metal dielectric layer, said method comprising:
- providing a semiconductor structure;
- forming a first dielectric layer on said semiconductor structure;
- forming a plurality of conductor structures in said first dielectric layer;
- removing partial said first dielectric layer, said removing step using said conductor structures as etching mask, wherein said etching mask is a self-aligned hard mask;
- and
- forming a second dielectric layer between said conductor structures, said second dielectric layer having a dielectric constant smaller than said first dielectric layer and having at least an air void contained therein.
A method for forming low dielectric constant inter-metal dielectric layer, said method comprising:
- providing a semiconductor structure, said semiconductor structure having a plurality of conductor structures thereon and a first dielectric layer on lateral sides of said conductor structures;
- and
- forming a second dielectric layer over said conductor structures, said second dielectric layer having at least an air void contained therein.
Dependencies are inferred from the claim text.