Back to results
US 2003/0119303 A1Published application
Method of forming a patterned tungsten damascene interconnect
AssigneeOki Electric Industry Co., Ltd.
InventorsTomoyuki Morita, Yusuke Harada
Life of this patent
Estimating the term…
Abstract
A method for forming a semiconductor device includes providing a semiconductor substrate, forming an insulating film having a opening, forming a titanium film so as to extend from the semiconductor substrate in the opening to the insulating film surface, plasma treating the titanium film with a mixed gas of hydrogen and nitrogen; and forming a titanium nitride on the titanium film. Accordingly, the method can decrease a contact resistance of the tungsten interconnection in a contact hole.
Claims14
A method for forming a semiconductor device comprising:
- providing a semiconductor substrate;
- forming an insulating film having a opening;
- forming a titanium film so as to extend from the semiconductor substrate in the opening to the insulating film surface;
- plasma treating the titanium film with a mixed gas of hydrogen and nitrogen;
- and
- forming a titanium nitride on the titanium film.
3 more elements
Dependencies are inferred from the claim text.