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US 2003/0119260 A1Published application
Method of manufacturing a flash memory cell
AssigneeHynix Semiconductor Inc.
InventorsJum Soo Kim, Sung Mun Jung, Jung Ryul Ahn, Young Ki Shin, Young Bok Lee
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Abstract
A method of manufacturing a flash memory cell. The method includes controlling a wall sacrificial oxidization process, a wall oxidization process and a cleaning process of a trench insulating film that are performed before/after a process of forming the trench insulating film for burying a trench to etch the trench insulating film to a desired space. Therefore, it is possible to secure the coupling ratio of a floating gate by maximum and implement a device of a smaller size.
Claims31
A method of manufacturing a flash memory cell comprising:
- forming a pad oxide film and a pad nitride film on a semiconductor substrate;
- forming a trench in the semiconductor substrate;
- forming a trench insulating film on the entire structure and then implementing a first chemical mechanical polishing (CMP) process to isolate the trench insulating film;
- removing the pad nitride film, by which a given portion of the trench insulating film forms a protrusion;
- performing an etch process to etch the protrusion of the trench insulating film a given width;
- forming a first polysilicon layer on the entire structure and then implementing a second CMP process to form a floating gate;
- and
- forming a dielectric film and a second polysilicon layer on the entire structure and then implementing an etch process to form a control gate.
5 more elements
Dependencies are inferred from the claim text.