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US 2003/0119255 A1Published application
Method of manufacturing a flash memory cell
AssigneeHynix Semiconductor Inc.
InventorsCha Deok Dong, Sang Wook Park
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Abstract
The present invention relates to a method of manufacturing a flash memory cell capable of preventing an oxidation of a dielectric film between a floating gate and a control gate, in a manner that a polysilicon film for floating gate is deposited, nitrogen ions are injected to make amorphous and contaminate the surface of the polysilicon film.
Claims15
A method of manufacturing a flash memory cell, comprising the steps of:
- sequentially forming a tunnel oxide film and a first polysilicon film on a semiconductor substrate;
- nitrifying the surface of the first polysilicon film by performing a nitrogen ion implantation process;
- patterning given regions of the first polysilicon film and the tunnel oxide film;
- sequentially forming and then patterning a dielectric film, a second polysilicon film, a tungsten silicide film and a nitride film on the entire structure and patterning to form a stack gate on which a floating gate and a control gate are stacked;
- and
- forming source and drain junction regions in the semiconductor substrate.
3 more elements
Dependencies are inferred from the claim text.