Back to results
US 2003/0119242 A1Published application
MFMOS capacitors with high dielectric constant materials
AssigneeSharp Laboratories of America, Inc.
InventorsTingkai Li, Sheng Teng Hsu, Hong Ying, Bruce D. Ulrich, Yanjun Ma
Life of this patent
Estimating the term…
Abstract
A MFMOS one transistor memory structure for ferroelectric non-volatile memory devices includes a high dielectric constant material such as ZrO2, HfO2, Y2O3, or La2O3, or the like, or mixtures thereof, to reduce the operation voltage and to increase the memory window and reliability of the device.
Claims19
A MFMOS one transistor memory device comprising:
- a semiconductor substrate;
- an oxide layer positioned on said substrate, said oxide layer having a dielectric constant of at least 10;
- a bottom electrode positioned on said oxide layer;
- and
- a ferroelectric layer positioned on said bottom electrode.
2 more elements
A MFMOS memory device comprising:
- a semiconductor substrate;
- an oxide layer positioned on said substrate wherein said oxide layer is manufactured of a material chosen from the group consisting of ZrO2, HfO2, Y2O3, La2O3 and mixtures thereof;
- a bottom electrode positioned on said oxide layer;
- and
- a ferroelectric layer positioned on said bottom electrode.
2 more elements
A method of manufacturing a MFMOS one transistor memory device, comprising the steps of:
- providing a semiconductor substrate;
- depositing an oxide layer on said semiconductor substrate, said oxide layer comprising a material chosen from the group consisting of ZrO2, HfO2, Y2O3, and La2O3;
- depositing a bottom electrode on said oxide layer;
- and
- depositing a PGO film on said bottom electrode.
2 more elements
Dependencies are inferred from the claim text.