Architecture of laser fuse box of semiconductor integrated circuit and method for fabricating the same

A method for fabricating a laser fuse box of a semiconductor integrated circuit comprising:

• depositing a first insulating layer over a semiconductor substrate having electronic circuit elements thereon;
• depositing and patterning a silicon layer on the first insulating layer to form a plurality of fuses;
• forming a second insulating layer on the plurality of fuses;
• and
• selectively etching the second insulating layer to a predetermined depth to form windows that define the fuse box, the windows divided into two open regions extending longitudinally in the fuse box, the windows extending along either side of the central regions of the fuses, the central regions of the fuses being covered by the second insulating layer.

A method for fabricating a laser fuse box of a semiconductor integrated circuit comprising:

• depositing a first insulating layer over a semiconductor substrate having electronic circuit elements thereon;
• depositing and patterning a silicon layer on the first insulating layer to form a plurality of laser fuses;
• forming a second insulating layer on the plurality of laser fuses;
• selectively etching the second insulating layer to a predetermined depth to form one or more windows for an opening in the fuse box;
• and
• selectively depositing a third insulating layer at the central regions of the fuses in the windows.