Method for fabricating semiconductor layers
AssigneeOSRAM Opto Semiconductors GmbH
InventorsAndreas Plossl, Berthold Hahn, Dominik Eisert, Stephan Kaiser
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Abstract
A method is provided for fabricating a useful layer containing at least one semiconductor layer, in which the useful layer is separated from a carrier. In this case, the useful layer is applied to the carrier and an auxiliary carrier is applied to that side of the useful layer that is remote from the carrier by a connecting layer at a joining temperature. Afterward, the carrier is stripped away at a temperature that is greater than or equal to the joining temperature and is less than the melting point of the connecting layer. At least a part of the useful layer together with the auxiliary carrier is removed from the carrier.
Claims16
A fabrication method, which comprises the steps of:
- providing a carrier;
- applying a useful layer containing at least one semiconductor layer to the carrier;
- applying an auxiliary carrier to that side of the useful layer remote from the carrier with a connecting layer disposed between the auxiliary carrier and the useful layer at a joining temperature;
- and
- mechanically stripping away the carrier at a temperature greater than or equal to the joining temperature and is less than a melting point of the connecting layer, at least a part of the useful layer together with the auxiliary carrier being stripped away from the carrier.
Dependencies are inferred from the claim text.