Methods of forming nitride films
AssigneeTrikon Holdings Limited
InventorsJashu Patel, Knut Beekman
Life of this patent
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Abstract
A silicon nitride film, for example, is deposited by introducing into a plasma region of a chamber a silicon containing gas, molecular nitrogen and sufficient hydrogen to dissociate the nitrogen to allow the silicon and nitrogen to react to form a silicon nitride film on a surface adjacent the plasma region. The thus deposited film may then be subjected to an activation anneal.
Claims44
A method of depositing a silicon nitride film including introducing into a plasma region of a chamber a silicon containing gas, molecular nitrogen and sufficient hydrogen to dissociate the nitrogen to allow the silicon and nitrogen to react to form a silicon nitride film on a surface adjacent the plasma region.
A method of forming a nitride film including introducing into a plasma region of a chamber a source of an element to be nitrided, molecular nitrogen and sufficient hydrogen to dissociate the nitrogen to allow the element and the nitrogen to react to form the nitride film on a surface adjacent the plasma region.
A silicon nitride film having reduced Si—H and N—H bonding.
A silicon nitride film having a FTIR peak area ratio Si—H:Si—N ratio <0.2.
A silicon nitride film having a FTIR peak area ratio N—H:Si—N ratio <0.07.
A deposited silicon nitride film which exhibits less than 2% shrinkage in thickness when subjected to an activation implant anneal at 700° C.
A deposited silicon nitride film which exhibits less than 5E9 dynes/cm2 change in tensile stress when subjected to an activation implant anneal at 700° C.
A method of depositing a stochiometric silicon nitride film including introducing into a plasma region of a chamber a silicon containing gas, molecular nitrogen and sufficient hydrogen to dissociate the nitrogen to allow the silicon and nitrogen to react to form a stochiometric silicon nitride film on a surface adjacent the plasma region.
A method of forming a stochiometric nitride film including introducing into a plasma region of a chamber a source of an element to be nitrided, molecular nitrogen and sufficient hydrogen to dissociate the nitrogen to allow the element and the nitrogen to react to form the stochiometric nitride film on a surface adjacent the plasma region.
A method of depositing a silicon nitride film including introducing into a plasma region of a chamber a silicon containing gas, molecular nitrogen and sufficient hydrogen to dissociate the nitrogen to allow the silicon and nitrogen to react to form a silicon nitride film on a surface adjacent the plasma region, and then annealing the formed film.
A method of forming a nitride film including introducing into a plasma region of a chamber a source of an element to be nitrided, molecular nitrogen and sufficient hydrogen to dissociate the nitrogen to allow the element and the nitrogen to react to form the nitride film on a surface adjacent the plasma region, and then annealing the formed film.
Dependencies are inferred from the claim text.