High-frequency semiconductor device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorTakahiro Ohnakado
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Abstract
An ESD (electrostatic discharge) protective circuit is connected to a node which is branching a high frequency signal input/output line connected to a high frequency input/output pad. A high frequency internal circuit is connected as a succeeding stage via a DC blocking capacitor such as a PIP (Polysilicon Insulator Polysilicon) capacitor, MIM (Metal Insulator Metal) capacitor, or comb capacitor to implement high ESD tolerability without significantly degrading high frequency characteristics.
Claims10
A high frequency semiconductor device having one end of a high frequency signal input/output line connected to a high frequency input/output pad, comprising:
- an internal circuit connected to the other end of said high frequency signal input/output line;
- a protective circuit connected between a node and a ground line, said node branching said high frequency signal input/output line connected to the high frequency input/output pad;
- and
- a DC blocking capacitor connected in series between said node of the high frequency signal input/output line and said internal circuit.
A high frequency semiconductor device having one end of a high frequency signal input/output line connected to a high frequency input/output pad and having an MOS transistor, comprising:
- an internal circuit connected to the other end of said high frequency signal input/output line and including a first stage circuit;
- and
- a protective circuit connected to a node branching said high frequency signal input/output line;
- wherein
- an insulation film thickness of the first stage circuit of said internal circuit is selected to be larger than an insulation film thickness of a gate insulation film of said MOS transistor.
A high frequency semiconductor device having one end of a high frequency signal input/output line connected to a high frequency input/output pad and having an MOS transistor, comprising:
- an internal circuit connected to the other end of said high frequency signal input/output line and including a first stage circuit;
- and
- a protective circuit connected to a node branching said high frequency signal input/output line;
- wherein
- capacitance of the first stage circuit of said internal circuit is selected to be larger than an insulation film capacitance of a gate insulation film of said MOS transistor.
Dependencies are inferred from the claim text.