Magnetic random access memory using schottky diode
AssigneeHynix Semiconductor Inc.
InventorChang Shuk Kim
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Abstract
A magnetic random access memory (MRAM) using a schottky diode is disclosed. In order to achieve high integration of the memory device, a word line is formed on a semiconductor substrate without using a connection layer and a stacked structure including an MTJ cell, a semiconductor layer and a bit line is formed on the word line, thereby forming the schottky diode between the MTJ cell and the bit line. As a result, a structure of the device is simplified, and the device may be highly integrated due to repeated stacking.
Claims8
A magnetic random access memory utilizing a schottky diode comprising:
- a magnetic tunnel junction (MTJ) cell;
- a bit line;
- and
- a semiconductor layer disposed between the MTJ cell and the bit line, wherein one of a metal layer for the bit line and a metal layer on a top portion of the MTJ cell forms a schottky barrier of the schottky diode.
A magnetic random access memory utilizing a schottky diode comprising:
- a stacked structure comprising:
- a word line;
- a magnetic tunnel junction (MTJ) cell;
- a semiconductor layer;
- and
- a bit line;
- wherein the stacked structure is repeatedly formed on a semiconductor substrate an n number of times.
A magnetic random access memory utilizing a schottky diode comprising:
- a stacked structure comprising:
- a word line;
- a first semiconductor layer;
- a magnetic tunnel junction (MTJ) cell;
- a second semiconductor layer;
- and
- a bit line;
- wherein the stacked structure is repeatedly formed on a semiconductor substrate an n number of times.
A magnetic random access memory utilizing a schottky diode comprising:
- a stacked structure comprising:
- a word line;
- a magnetic tunnel junction (MTJ) cell;
- a doped polysilicon layer;
- and
- a bit line;
- wherein the stacked structure is repeatedly formed on a semiconductor substrate an n number of times.
Dependencies are inferred from the claim text.