Interconnect structure capped with a metallic barrier layer and method fabrication thereof
OwnerChen-Chiu Hsue, Shyh-Dar Lee +1inventors
InventorsChen-Chiu Hsue, Shyh-Dar Lee, Tzu-Kun Ku
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Abstract
An interconnect structure has at least two adjacent metal wiring lines patterned on a semiconductor substrate and separated by a gap. A dielectric layer is formed on the metal wiring lines to fill the gap to a predetermined thickness. A metallic barrier layer, which may be of Ti, TiN, Ta, TaN, Cu or copper alloys are sandwiched between the sidewall of the metal wiring line and the dielectric layer. In addition, a contact plug passing through the dielectric layer is electrically connected to the top of the metal wiring line.
Claims18
An interconnect structure on a semiconductor substrate, comprising:
- at least two adjacent metal wiring lines patterned on the semiconductor substrate and spaced from a gap;
- a metallic barrier layer formed on the sidewalls of the metal wiring lines;
- a dielectric layer formed on the metal wiring lines and the metallic barrier layer and filling the gap to a predetermined thickness;
- and
- a contact plug passing through the dielectric layer and electrically connected to the top of the metal wiring line.
A method of fabricating an interconnect structure, comprising steps of:
- providing a semiconductor substrate having at least two adjacent metal wiring lines spaced from a gap;
- forming a metallic barrier layer on the sidewalls of the metal wiring lines;
- forming a dielectric layer on the metal wiring lines to fill the gap and reach a predetermined thickness;
- planarizing the top of the dielectric layer;
- forming a via hole passing through the dielectric layer and exposing the top of the metal wiring line;
- and
- forming a conductive layer to fill the via hole.
Dependencies are inferred from the claim text.