Semiconductor device and fabrication method thereof
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorYoshikazu Yoneda
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Abstract
A semiconductor device includes a silicon substrate as a semiconductor substrate, having a main surface including a first region and a second region defined in plane, an epitaxial grown layer of high resistance as a first layer on the main surface, and an epitaxial grown layer of low resistance as a second layer formed at the upper side of the first layer, and having a resistance lower than the resistance of the first layer. The semiconductor device includes a bipolar transistor at the first region and a passive element at the second region. The second layer is arranged so as to cover at least the first region and avoid at least a portion of the second region.
Claims10
A semiconductor device comprising:
- a semiconductor substrate having a main surface including first and second regions defined in plane;
- a first layer formed on said main surface;
- and
- a second layer formed at an upper side of said first layer, and having a resistance lower than the resistance of said first layer,
- including a bipolar transistor at said first region and a passive element at said second region,
- said second layer arranged so as to cover at least said first region and avoid at least a portion of said second region.
A fabrication method of a semiconductor device comprising the steps of:
- forming an impurity-containing portion at a predetermined region at a main surface of a semiconductor substrate;
- forming a first layer so as to cover said impurity-containing portion from an upper side by epitaxial growth at a high temperature of at least 900° C.;
- and
- forming a second layer having a resistance lower than the resistance of said first layer at an upper side of said first layer by epitaxial growth.
Dependencies are inferred from the claim text.