Bipolar transistor and method for manufacturing the same

A bipolar transistor comprising:

• a semiconductor substrate;
• an intrinsic base region low-density doped with a first conductive dopant on the upper surface of said semiconductor substrate;
• a collector region doped with a second conductive dopant on a first portion of the upper surface of said intrinsic base region and formed in a single well with at least two branched lower terminals;
• an extrinsic base region doped with said first conductive dopant on a second portion of the upper surface of said intrinsic base region and, said second portion spaced from said first portion by a designated interval;
• an emitter region doped with said second conductive dopant on a third portion of the upper surface of said intrinsic base region, said third portion spaced from said first portion and said second portion by a designated interval;
• a collector electrode formed on the upper surface of said collector region;
• an emitter electrode formed on the upper surface of said emitter region;
• and
• a base electrode formed on the upper surface of said extrinsic base region.

A method for manufacturing a bipolar transistor, said method comprising the steps of:

• forming a semiconductor substrate doped with a first conductive dopant;
• forming an intrinsic base region low-density doped with a second conductive dopant on said semiconductor substrate, said second conductive dopant being contrary to said first conductive dopant;
• forming an extrinsic base region high-density doped with said second conductive dopant on a first portion of the upper surface of said intrinsic base region and formed in a single well with at least two branched lower terminals;
• forming an emitter region doped with said first conductive dopant on a second portion of the upper surface of said intrinsic base region, said second portion spaced from said first portion by a designated interval;
• and
• forming a collector electrode, an emitter electrode and a base electrode on the lower surface of said semiconductor substrate, the upper surface of said emitter region and the upper surface of said extrinsic base region, respectively.