Method to decrease fluorine contamination in low dielectric constatnt films
AssigneeInternational Business Machines Corporation
InventorsTimothy H. Dalton, Bernd E. E. Kastenmeier, Theodorus E. Standaert
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Abstract
A method for maintaining critical dimension during the etching of dielectrics, having the following steps: depositing a layer of photoresist over a layer of dielectric; patterning the photoresist such that voids are formed in the photoresist, the voids having sidewalls and a bottom; depositing an overlayer in an etch chamber; transferring the patterning in the photoresist to the dielectric.
Claims19
A method for maintaining profile control during the etching of dielectrics, comprising the steps of:
- depositing a layer of photoresist over a layer of dielectric;
- patterning the photoresist such that voids are formed in the photoresist, the voids having sidewalls and a bottom;
- depositing an overlayer in an etch chamber;
- transferring the patterning in the photoresist to the dielectric.
A method for maintaining profile control during the etching of dielectrics, comprising:
- depositing a layer of photoresist over a layer of dielectric;
- b) patterning the photoresist such that voids are formed in the photoresist, the voids having sidewalls and a bottom, the voids having a depth and width;
- c) depositing an overlayer in an etch chamber;
- d) transferring the patterning in the photoresist to the dielectric, wherein the pattern transferred to the dielectric is substantially similar in depth and width to the depth and width of the voids patterned in the photoresist.
Dependencies are inferred from the claim text.