Semiconductor cleaner and method of cleaning semiconductor
OwnerKen Sasakiinventor
Life of this patent
Estimating the term…
Abstract
A semiconductor cleaner includes (a) an inner wet bath which is filled with liquid and in which a wafer to be cleaned is soaked, (b) an outer wet bath which is filled with liquid and in which the inner wet bath is soaked, (c) a megasonic-wave irradiator located outside the inner wet bath for irradiating megasonic waves to the wafer to clean the wafer, and (d) a unit which moves the megasonic-wave irradiator towards or away from the inner wet bath.
Claims31
A semiconductor cleaner comprising:
- (a) a wet bath which is filled with liquid and in which a wafer to be cleaned is soaked;
- (b) a megasonic-wave irradiator located outside said wet bath for irradiating megasonic waves to said wafer to clean said wafer;
- and
- (c) a unit which moves said megasonic wave irradiator towards or away from said wet bath.
A semiconductor cleaner comprising:
- (a) a wet bath which is filled with liquid and in which first to N-th wafers to be cleaned are soaked wherein N is an integer equal to or greater than two;
- (b) first to N-th megasonic-wave irradiators located outside said wet bath and associated with said first to N-th wafers, respectively, for irradiating megasonic waves to said first to N-th wafers to clean said first to N-th wafers;
- and
- (c) first to N-th units which move said first to N-th megasonic-wave irradiators towards or away from said wet bath, respectively.
A semiconductor cleaner comprising:
- (a) a wet bath which is filled with liquid and in which a wafer to be cleaned is soaked;
- and
- (b) a megasonic-wave irradiator located outside said wet bath for irradiating megasonic waves to said wafer to clean said wafer,
- said wet bath being formed at an inner surface thereof with irregularity having a surface roughness greater than a wavelength of said megasonic waves.
A semiconductor cleaner comprising:
- (a) an inner wet bath which is filled with liquid and in which a wafer to be cleaned is soaked;
- (b) an outer wet bath which is filled with liquid and in which said inner wet bath is soaked;
- (c) a megasonic-wave irradiator located outside said inner wet bath for irradiating megasonic waves to said wafer to clean said wafer;
- and
- (d) a unit which moves said megasonic-wave irradiator towards or away from said inner wet bath.
A semiconductor cleaner comprising:
- (a) an inner wet bath which is filled with liquid and in which first to N-th wafers to be cleaned are soaked wherein N is an integer equal to or greater than two;
- (b) an outer wet bath which is filled with liquid and in which said inner wet bath is soaked;
- (c) first to N-th megasonic-wave irradiators located outside said inner wet bath and associated with said first to N-th wafers, respectively, for irradiating megasonic waves to said first to N-th wafers to clean said first to N-th wafers;
- and
- (d) first to N-th units which move said first to N-th megasonic-wave irradiators towards or away from said inner wet bath, respectively.
A semiconductor cleaner comprising:
- (a) an inner wet bath which is filled with liquid and in which a wafer to be cleaned is soaked;
- (b) an outer wet bath which is filled with liquid and in which said inner wet bath is soaked;
- and
- (c) a megasonic-wave irradiator located outside said inner wet bath for irradiating megasonic waves to said wafer to clean said wafer;
- said inner wet bath being formed at an inner surface thereof with irregularity having a surface roughness greater than a wavelength of said megasonic waves.
A method of cleaning a wafer soaked in liquid filled in a wet bath, comprising the step of irradiating megasonic waves to said wafer with a relative distance between said wafer and a megasonic-wave irradiator being varied.
Dependencies are inferred from the claim text.